最大源漏极电压Vds
Drain-Source Voltage | 50V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -50V |
最大漏极电流Id
Drain Current | 6mA~14mA |
源漏极导通电阻Rds
Drain-Source On-State Resistance | -0.2V~-1.5V |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 300mW/0.3W |
耗散功率Pd
Power Dissipation | Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V |
| Description & Applications | 场效应晶体管的硅N沟道结型 音频频率低噪声放大器的应用 •包括两个设备SM5 •高| YFS|：| YFS|= 15毫秒（典型值），在VDS=10V，VGS=0 •高击穿电压：VGDS=-50 V •低噪音：NF=1.0分贝（典型值） 在VDS= 10 V，ID=0.5毫安，F=1千赫，RG=1kΩ的 •高输入阻抗：在VGS=-30 V IGSS= -1nA（最大值） |
| 描述与应用 | |