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  • Model:SSM5N16FE
  • Manufacturer:HUABAN
  • Date Code:12+ROHS 12+ROHS
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:DS
  • Package:SOT-553/ESV

最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
200mA/0.2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
3Ω@ VGS = 4V, ID = 10mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.6~1.1V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type High-Speed Switching Applications Analog-Switch Applications • Input impedance is high; driving current is extremely low. • Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. • High-speed switching • Housed in an ultra-small package suitable for high density mounting
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 •输入阻抗高,驱动电流极低。 •可直接驱动一个CMOS设备,即使在低电压下,由于低 栅极阈值电压。 •高速开关 •坐落在一个超小型封装,适用于高密度安装

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