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Parameters:

  • Model:XP152A11E5MR
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:211
  • Package:SOT-23/SC-59

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-700mA/-0.7A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.20Ω @-400mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--3.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsFEATURES Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V Rds(on) = 0.45Ω@ Vgs = -4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -4.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23
描述与应用低导通电阻:RDS(ON)=0.25Ω@ VGS=-10V 的Rds(on)=0.45Ω@ VGS=-4.5V 超高速开关 内置栅极保护二极管 驱动电压:-4.5V P沟道功率MOSFET DMOS结构式 小封装:SOT-23

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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XP152A11E5MR
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