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Parameters:

  • Model:IPD13N03LAG
  • Manufacturer:HUABAN
  • Date Code:06+rohs 06NOPB
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:13N03LA
  • Package:TO-252

Drain-Source Voltage (Vds)  25V

Vgs(±)

Gate-Source Voltage

 
Drain Current (Id)  30A
Drain-Source On-State (Rds)  V GS=10 V, I D=30 A
RDS=10.7~12.8mΩ

Vgs (th)

Gate-Source Threshold Voltage

 1.2~2v
Power dissipation (Pd)  46w
Description & Applications  OptiMOS®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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IPD13N03LAG
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