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  • Model:TPCP8F01
  • Manufacturer:HUABAN
  • Date Code:08+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:8F01
  • Package:PS-8

 

 Transistor Type  PNP

Collector-Base Voltage(VCBO)
 -30V

Collector-Emitter Voltage(VCEO)
 -20V

Collector Current(IC)
 -3.0A

Transtion Frequency(fT)
 

DC Current Gain(hFE)
 200~500
VCE(sat)
Collector-Emitter Saturation Voltage
 -0.19V
 MOSFET TYPF N-ch MOS FET
Vds
Drain-Source Voltage
 20V
Vgs(±)
Gate-Source Voltage
 ±10V

Drain Current(ID)
 100MA/0.1A
Rds(on)
FET Drain-Source On-State Resistance
  ID = 10 mA, VGS = 4.0 V RDS=1.5~3Ω
ID = 10 mA, VGS = 2.5 V RDS=2.2~4Ω
ID = 1 mA, VGS = 1.5 V  RDS=5.2~15Ω
Vgs(th)
Gate-Source Threshold Voltage
 0.6~1.1V

Power Dissipation(PD_
 1W

Description & Applications

 Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type 
 
○ Swtching Applications 
○ Load Switch Applications 
○ Multi-chip discrete device; built-in PNP Transistor for 
main switch and N-ch MOS FET for drive 
 • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) 
(PNP Transistor) 
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) 
(PNP Transistor) 

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