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Parameters:

  • Model:RN1105CT
  • Manufacturer:HUABAN
  • Date Code:11+ROHS 11+ROHS
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:L4
  • Package:CST3

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 20V
集电极连续输出电流IC Collector Current(IC) 50mA
基极输入电阻R1 Input Resistance(R1) 2.2kΩ
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47kΩ
电阻比(R1/R2) Resistance Ratio 0.0468
直流电流增益hFE DC Current Gain(hFE) 120
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 50
Description & Applications TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor). * Switching Applications . * Inverter Circuit Applications. * Interface Circuit Applications . * Driver Circuit Applications . * Incorporating a bias resistor into a transistor reduces parts count. * Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
描述与应用 东芝晶体管NPN硅外延式(PCT程序)(偏置电阻内置晶体管)。 *开关应用。 *逆变器电路应用。 *接口电路应用。 *驱动器电路应用。 *将偏置电阻晶体管,减少了部件数量。 *减少零件计数使能越来越紧凑的设备制造和装配成本节省。

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RN1105CT
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