| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC Collector Current(IC) |
50mA |
| 基极输入电阻R1 Input Resistance(R1) |
2.2kΩ |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47kΩ |
| 电阻比(R1/R2) Resistance Ratio |
0.0468 |
| 直流电流增益hFE DC Current Gain(hFE) |
120 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
50 |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor). * Switching Applications . * Inverter Circuit Applications. * Interface Circuit Applications . * Driver Circuit Applications . * Incorporating a bias resistor into a transistor reduces parts count. * Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 |
东芝晶体管NPN硅外延式（PCT程序）（偏置电阻内置晶体管）。 *开关应用。 *逆变器电路应用。 *接口电路应用。 *驱动器电路应用。 *将偏置电阻晶体管，减少了部件数量。 *减少零件计数使能越来越紧凑的设备制造和装配成本节省。 |