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  • Model：NTD40N03RT4G
  • Manufacturer：HUABAN
  • Date Code：06NOPB 06+PB
  • Standard Package：2500
  • Min Order：10
  • Mark/silk print/code/type：T40N03G
  • Package：TO-252

最大源漏极电压Vds
Drain-Source Voltage		 25v
栅源极击穿电压V(BR)GS
Gate-Source Voltage		 -25v
漏极电流(Vgs=0V)IDSS
Drain Current		 45A
关断电压Vgs(off)
Gate-Source Cut-off Voltage		 1~2v
耗散功率Pd
Power Dissipation		 1.5W
Description & Applications •Power MOSFET •Low RDS(on) to Minimize Conduction Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
描述与应用 •功率MOSFET •低的RDS（on）减少传导损耗 •低栅极电荷 •优化高效率的DC-DC转换器的高侧开关需求

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NTD40N03RT4G
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