集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-160V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
−150V |
集电极连续输出电流IC
Collector Current(IC) |
−500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) |
100~300MHz |
直流电流增益hFE
DC Current Gain(hFE) |
60~240 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
耗散功率Pc
PoWer Dissipation |
350mW/0.35W |
| Description & Applications |
PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise |
| 描述与应用 |
PNP硅晶体管 产品描述： 中央半导体CMPT5086，CMPT5087类型PNP硅 由外延平面工艺制造的晶体管，环氧树脂模制在一个表面 安装包，专为需要高增益和低噪声的应用 |