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  • Model：PH3230S
  • Manufacturer：HUABAN
  • Date Code：05+ 05+
  • Standard Package：0
  • Min Order：1
  • Mark/silk print/code/type：3230S
  • Package：SOT-669

最大源漏极电压Vds Drain-Source Voltage 30V
Vgs(±) Gate-Source Voltage 20V
Id Drain Current 100A
Rds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance  VGS = 10 V; ID = 25 A RDS= 2.7~3.2 mΩ
Vgs（th） Gate-Source Threshold Voltage 1~3V
 Power Dissipation 62.5W
Description & Applications
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
Logic level compatible 
■ Low gate charge
■ High density mounting 
■ Very low on-state resistance.

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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PH3230S
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