| Drain-Source Voltage (Vds) |
60V |
|
Vgs(±)
Gate-Source Voltage
|
20V |
| Drain Current （Id） |
115MA |
|
Rds(on)
Drain-Source On-State Resistance
|
VGS = 5.0V, ID = 0.115A 6Ω |
|
Vgs(th)
Gate-Source Threshold Voltage
|
2V |
| Power Dissipation (Pd) |
250MW |
| Description & Applications |
• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
| Technical Documentation Download |
Read Online |