集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 180~390 @-6V,-0.001A |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | PNP general purpose transistor • Low current (max. 100 mA) • Low voltage (max. 40 V). • General purpose switching and amplification in communication, electronic data processing (EDP) and consumer applications. • PNP transistor in an SC-75 plastic package. • NPN complement: 2PC4617. |
描述与应用 | PNP通用晶体管 •低电流(最大100 mA) •低电压(最大40 V)。 •通用开关和放大通信,电子数据处理(EDP)和消费类应用。 •在SC-75塑料封装的PNP晶体管。 •NPN补充:2PC4617。 |