集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
−20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-16V |
集电极连续输出电流IC
Collector Current(IC) |
-2A |
截止频率fT
Transtion Frequency(fT) |
80MHz |
直流电流增益hFE
DC Current Gain(hFE) |
150~300 |
管压降VCE(sat)
Collector-Emitter SaturationVoltage |
-170mV/-0.17V |
耗散功率Pc
PoWer Dissipation |
500mW/0.5W |
Description & Applications |
silicon PNP epitaxial type high hFE; high collector current; small collector to emitter saturation voltage; high collector dissipation; small packing for mounting |
描述与应用 |
硅PNP外延型 HFE高; 高集电极电流; 小集电极到发射极饱和电压; 高集电极耗散; 小包装安装 |