集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -300V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流IC
Collector Current(IC) | -50mA |
截止频率fT
Transtion Frequency(fT) | 70MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~200 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc
PoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR high breakdown voltage； excellent DC current gain ratio |
| 描述与应用 | PNP硅平面高压晶体管 击穿电压高; 卓越的DC电流增益比 |