集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −150mA/-0.15A |
截止频率fT
Transtion Frequency(fT) | 80MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -100mV/-0.1V |
耗散功率Pc
PoWer Dissipation | 100mW/0.1W |
| Description & Applications | silicon PNP epitaxial type • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Complementary to 2SC4738F |
| 描述与应用 | 硅PNP外延型 •高电压：VCEO=-50 V •高电流：IC= -150 mA（最大） •高HFE：HFE=120〜400 •优秀的HFE线性 HFE（IC= -0.1毫安）/ HFE（IC=-2毫安）= 0.95（平均值） •互补2SC4738F |