集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 80MHz |
直流电流增益hFE
DC Current Gain(hFE) | 180~390 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 100mW/0.1W |
| Description & Applications | PNP Silicon epitaxial planar type For general amplification Complementary to 2SC5609 Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 对于一般的放大 互补型2SC5609 特点 •高电流传输比HFE FOWARD •SSS迷你型封装，允许裁员和通过磁带包装设备和自动插入变薄 |