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Parameters:

  • Model:2SB1202T
  • Manufacturer:HUABAN
  • Date Code:05+NOPB 05+NOPB13RM+1200
  • Standard Package:700
  • Min Order:10
  • Mark/silk print/code/type:B1202
  • Package:TO-252/DPAK/TP-FA

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−700mV/-0.7V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor High current switching applications Applications voltage regulators,relay drivers,lamp drivers. electrical equipment Feature Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching speed
描述与应用PNP硅外延平面晶体管 高电流开关应用 应用 电压调节器,继电器驱动器,灯驱动器。电气设备 特点 低集电极 - 发射极饱和电压 大电流容量,广ASO 开关速度快

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2SB1202T
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