集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流IC
Collector Current(IC) | −500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 85~170 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD1820 Features Large collector current IC S-Mini type package |
| 描述与应用 | PNP硅外延平面晶体管 对于一般的放大 补充型2SD1820 特点 大集电极电流IC S-迷你型封装 |