集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -150V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −150V |
集电极连续输出电流IC
Collector Current(IC) | -50mA |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 130~220 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD1821 Features High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package |
| 描述与应用 | PNP硅外延平面晶体管 对于高击穿电压低噪声放大 补充型2SD1821 特点 高集电极发射极电压VCEO。 低噪声电压NV。 S-迷你型封装 |