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Parameters:

  • Model:2SB1261-Z-E1
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:B1261
  • Package:TO-252/DPAK

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−60V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
50MHz
直流电流增益hFE
DC Current Gain(hFE)
100~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
2W
Description & ApplicationsPNP Silicon epitaxial planar transistor High hFE Low VCE
描述与应用PNP硅外延平面晶体管 高HFE 低VCE

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1261-Z-E1
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