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Parameters:

  • Model:2SB1275HRATLQ
  • Manufacturer:HUABAN
  • Date Code:03+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:B1275
  • Package:TO-252/DPAK/SC-63/CPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-160V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-160V
集电极连续输出电流IC
Collector Current(IC)
-1.5A
截止频率fT
Transtion Frequency(fT)
50MHz
直流电流增益hFE
DC Current Gain(hFE)
56~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-2V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor Power Transistor Features 1) High breakdown voltage. 2) Low collector output capacitance. 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918
描述与应用PNP硅外延平面晶体管 功率晶体管 特点 1)高的击穿电压。 2)低集电极输出电容。 3)高转换频率(FT =50MHZ) 4)补充2SD1918

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1275HRATLQ
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