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Parameters:

  • Model:2SB1308 T100R
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BFR
  • Package:SOT-89/SC-62/MPT

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−450mV/-0.45V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & Applications PNP Silicon epitaxial planar transistor Power transistor Features Low saturation voltage Excellent DC current gain Complements to 2SD1963.
描述与应用 PNP硅外延平面晶体管 功率晶体管 特点 低饱和电压 优秀DC电流增益 2SD1963补充型。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1308 T100R
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