集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -10V |
集电极连续输出电流IC
Collector Current(IC) | -1A |
截止频率fT
Transtion Frequency(fT) | 130MHz |
直流电流增益hFE
DC Current Gain(hFE) | 130~350 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1.2V |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-frequency amplification Features • Large current capacitance • Low collector to emitter saturation voltage • Small type package, allowing downsizing and thinning of the equipment |
| 描述与应用 | PNP硅外延平面晶体管 对于低频放大 特点 •大电流容量 •低集电极到发射极饱和电压 •小型封装，允许裁员和变薄的设备 |