集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -100V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −100V |
集电极连续输出电流IC
Collector Current(IC) | -700mA/-0.7A |
截止频率fT
Transtion Frequency(fT) | 75MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007 |