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Parameters:

  • Model:2SB806
  • Manufacturer:HUABAN
  • Date Code:05+ 05+nopb200
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:KP
  • Package:SOT-89/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-120V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
75MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
2W
Description & Applications PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007
描述与应用 PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB806
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