集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −130V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −80V |
集电极连续输出电流IC
Collector Current(IC) | -5A |
截止频率fT
Transtion Frequency(fT) | 30MHz |
直流电流增益hFE
DC Current Gain(hFE) | 130~560 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 1.3W |
| Description & Applications | Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | PNP硅外延平面型 电源开关 互补2SD1256 ■特点 •低集电极 - 发射极饱和电压VCE（星期六） •良好的线性正向电流传输比HFE •大集电极电流IC •N型包可以直接焊接在印刷电路板等的小型电子设备的散热片。 |