集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC
Collector Current(IC) | 20mA |
截止频率fT
Transtion Frequency(fT) | 600MHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~80 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial planar type For high-frequency amplification Features Mirco package High gain bandwidth product Low output capacitance |
| 描述与应用 | NPN硅外延平面型 对于高频放大 特点 MIRCO包 高增益带宽积 低输出电容 |