集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 200mA/0.2A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 250~500 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors For high frequency amplify applications Features Low collector to emitter saturation voltage Excellent linearity of DC forward current gain super mini package for easy mounting. |
| 描述与应用 | NPN硅外延晶体管 对于高频放大的应用 特点 集电极到发射极饱和电压低 优秀的线性的直流正向电流增益 易于安装的超小型封装。 |