集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
19V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
截止频率fT
Transtion Frequency(fT) |
1.1GHz |
直流电流增益hFE
DC Current Gain(hFE) |
56~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon epitaxial planer type RF amplifier Features Low noise figure High transister frequency Low collector to base time constant and high gain Excellent noise response |
| 描述与应用 |
NPN硅外延平面型 RF放大器 特点 低噪声系数 高型晶体管频率 基本时间常数和高增益低集电极 出色的噪声响应 |