集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial Transistors For AF applications features High VEBO Wide ASO and high durability against breakdown Complementary to 2SA1252 |
| 描述与应用 | NPN硅外延晶体管 对于AF应用 特点 高VEBO 宽的ASO和高耐久性反对击穿 互补型2SA1252 |