集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 120V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 100V |
集电极连续输出电流IC
Collector Current(IC) | 140mA/0.14A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 140~280 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN epitaxial planar Silicon Transistors High-Voltage Switching，Predriver applications Features High breakdown voltage Excellent linearity of hFE and small Cob Fast switching speed Very small size making it easy to provide high-density. Complementary to 2SA1415 |
| 描述与应用 | NPN外延平面硅晶体管 高电压开关，前置驱动器应用 特点 高击穿电压 卓越的线性度HFE和小COB 开关速度快 非常小的尺寸使其易于提供高密度。 互补型2SA1415 |