集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 160V |
集电极连续输出电流IC
Collector Current(IC) | 700mA/0.7A |
截止频率fT
Transtion Frequency(fT) | 120MHz |
直流电流增益hFE
DC Current Gain(hFE) | 200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN epitaxial planar Silicon Transistors High-Voltage Switching, predriver applications High breakdown voltage and large current capacity Fast switching speed Very small size making it easy to provide high-density. Complementary to 2SA1418 |
| 描述与应用 | NPN外延平面硅晶体管 高电压开关，前置驱动器应用 高击穿电压和大电流的能力 开关速度快 非常小的尺寸使其易于提供高密度。 互补型2SA1418 |