集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 40~200 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistors Applications UHF low-noise amplifiers ,wide-band amplifiers Features Small noise figure High power gain High cutoff frequency |
| 描述与应用 | NPN平面外延硅晶体管 应用 UHF低噪声放大器，宽带放大器 特点 噪声系数小 高功率增益 高截止频率 |