集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
集电极连续输出电流IC
Collector Current(IC) |
35mA |
截止频率fT
Transtion Frequency(fT) |
10Ghz |
直流电流增益hFE
DC Current Gain(hFE) |
80~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD Low Noise High Power Gains |
| 描述与应用 |
硅晶体管 微波低噪声放大器NPN硅外延晶体管4引脚MINI模具 低噪声 高功率增益 |