集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~240 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) DRIVER STAGE AMPLIFIER APPLIATIONS VOLTAGE AMPLIFIER APPLICATIONS Complementary to 2SA1620 |
描述与应用 | 东芝晶体管的硅NPN外延式(PCT的进程) 驱动级放大器的应用进展 电压放大器的应用 与2SA1620互补 |