集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
截止频率fT
Transtion Frequency(fT) |
80MHz |
直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) •Audio Frequency General Purpose Amplifier Applications •High Voltage: VCEO = 50 V •High Current: IC = 150 mA (max) •High hFE: hFE = 120 ~ 700 •Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) •Complementary to 2SA1832 •Small package |
| 描述与应用 |
特点 •东芝晶体管的硅NPN外延式（PCT程序） •音频通用放大器应用 •高电压：VCEO= 50 V •高电流：IC=150 mA（最大） •高HFE：HFE=120〜700 •优秀的HFE线性：HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）=0.95（典型值） •互补2SA1832 •小型封装 |