集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 16V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC
Collector Current(IC) | 70mA |
截止频率fT
Transtion Frequency(fT) | 7GHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •NPN Epitaxial Planar Silicon Transistor •VHF to UHF Wide-Band Low-Noise Amplifier Applications •Low noise : NF=1.1dB typ (f=1GHz). •High gain : S21e2=11dB typ (f=1GHz). •High cutoff frequency : fT=7.0GHz typ. |
| 描述与应用 | 特点 •NPN平面外延硅晶体管 •VHF，UHF宽带低噪声放大器的应用 •低噪音：NF=1.1分贝典型值（F =1GHz的）。 •高增益：S21E2=11分贝典型值（F =1GHz的）。 •高截止频率：：FT =7.0GHZ典型。 |