集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
600V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
600V |
集电极连续输出电流IC
Collector Current(IC) |
1A |
截止频率fT
Transtion Frequency(fT) |
30MHz |
直流电流增益hFE
DC Current Gain(hFE) |
60~120 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
350mV/0.35V |
耗散功率Pc
Power Dissipation |
2W |
| Description & Applications |
Features • SILICON TRANSISTORS • NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with the 2SA1871 |
| 描述与应用 |
特点 •硅晶体管 •NPN硅三重扩散型晶体管高速高压开关 •新的封装，尺寸之间的小信号和功率信号包 •高电压 •开关速度快 •与2SA1871互补晶体管 |