集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
截止频率fT
Transtion Frequency(fT) |
80MHz |
直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features • TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) • AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER AMPLICATIONS • Small Package • High Voltage AND HIGH CURRENT • High HFE • EXCELLENT HFE LINEARITY • COMPLEMENTARY TO 2SA1873 |
| 描述与应用 |
特点 •晶体管的硅NPN外延式（PCT程序） •音频频率通用放大器AMPLICATIONS的 •小包装 •高电压和大电流 •高HFE •优秀的HFE线性 •互补2SA1873 |