集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 1A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~600 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | <240mV/0.24V |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | Features • PNP/NPN Epitaxial planar Silicon transistor • Low frequency General purpose Amp application • large current capacity • Low collector to emitter saturation voltage |
| 描述与应用 | 特点 •PNP/ NPN外延平面硅晶体管 •低频通用放大器应用 •大电流容量 •低集电极到发射极饱和电压 |