集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 240MHz |
直流电流增益hFE
DC Current Gain(hFE) | 560~2700 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 150mV/0.15V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | • High frequency amplifier transistor ,RF switching Features •high transition frequency ,typically f T= 240 MHz •high HFE |
| 描述与应用 | •高频晶体管放大器，RF开关 特点 •高转换频率，通常F T=240兆赫 •高HFE |