集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 10Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 6V |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Features • SILICON TRANSISTOR • HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD • Small Package • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation |
| 描述与应用 | 特点 •硅晶体管 •高频低噪声放大器NPN硅外延晶体管4针SUPER MINI MOLD •小包装 •高增益带宽积（FT =10 GHz的TYP。） •低噪声，高增益 •低电压操作 |