集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
1A |
截止频率fT
Transtion Frequency(fT) |
150MHz |
直流电流增益hFE
DC Current Gain(hFE) |
180~390 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
耗散功率Pc
Power Dissipation |
500mW/0.5W |
| Description & Applications |
Features •Medium power transistor (50V, 1A) •Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA •PC=2W (on 40×40×0.7mm ceramic board) •Complements the 2SA1900 |
| 描述与应用 |
特点 •中等功率晶体管（50V，1A） •低饱和电压，通常VCE（星期六）=0.12V IC / IB=500mA/50mA •PC= 2W（40×40×0.7毫米的陶瓷板） •补充2SA1900 |