集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 5V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 2V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 11GHz |
直流电流增益hFE
DC Current Gain(hFE) | 70~140 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 90mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package |
| 描述与应用 | NPN外延硅晶体管超超小型模具包装 低噪声微波放大 特点 •低噪声 NF= 1.3 dB（典型值）。 @ VCE= 2 V，IC =3毫安，F =2吉赫 NF= 1.3 dB（典型值）。 @ VCE= 1 V，IC =3毫安，F =2吉赫 •超超级迷你模具包装 |