集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 30mA |
截止频率fT
Transtion Frequency(fT) | 11GHz |
直流电流增益hFE
DC Current Gain(hFE) | 135~270 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type UHF to S-band low noise amp，OSC application ■ Features • High gain |S21e|*2=10db • Low noise NF=0.9db • high cutoff frequency fT=11GHZ • low voltage ，low current operation |
| 描述与应用 | NPN硅外延平面型 UHF到S波段低噪声放大器，OSC应用 ■特点 •高增益| S21E| *2= 10db，干扰 •低噪声NF=0.9分贝。 •高截止频率fT=11GHz的 •低电压，低电流操作 |