集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 9.0V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 12Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 75~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage |
| 描述与应用 | NPN外延硅晶体管 4引脚微型模具 特写 •中等输出应用非常适于 •高增益，低噪声 •小反向传输电容 •可在低电压下运行 |