Home
Cart0

×

Parameters:

  • Model:2SC5508
  • Manufacturer:HUABAN
  • Date Code:05+ 05+nopb
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:T79
  • Package:SOT-343

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
3.3V
集电极连续输出电流IC
Collector Current(IC)
35mA
截止频率fT
Transtion Frequency(fT)
25GHz
直流电流增益hFE
DC Current Gain(hFE)
50~100
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
115mW/0.115W
Description & ApplicationsNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
描述与应用NPN硅RF晶体管 低噪声,高增益放大 扁平引线4-pin薄型超小型模具 特点 •非常低噪声,高增益放大应用 •NF= 1.1分贝,GA =16 dB。 @ F =2 GHz时,VCE= 2 V,IC= 5毫安 •最大可用功率增益::MAG =19 dB。 @ F =2 GHz时,VCE= 2 V,IC=20毫安 •fT= 25 GHz技术 •扁平引线4-pin薄型超小型模具(T =0.59毫米)

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
2SC5508
*Title:
Message:
*Code: