集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 3.3V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 25GHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~100 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 115mW/0.115W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益放大 扁平引线4-pin薄型超小型模具 特点 •非常低噪声，高增益放大应用 •NF= 1.1分贝，GA =16 dB。 @ F =2 GHz时，VCE= 2 V，IC= 5毫安 •最大可用功率增益：：MAG =19 dB。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 •fT= 25 GHz技术 •扁平引线4-pin薄型超小型模具（T =0.59毫米） |