集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 4.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 125mW/0.125W |
| Description & Applications | LOW FREQUENCY amplify APPLICATION SILICON NPN EPITAXIAL TYPE(mini type) DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high frequency voltage application. FEATUREs ● high gain bandwidth product fT=4.5GHZ ● high gain ，low lose ● can operate at low voltage ● Super mini package for easy mounting APPLICATION For TV tuners ,celluar phone system， high frequency Amplifier |
| 描述与应用 | 低频放大应用 硅NPN外延型（迷你型） 说明 2SC5620是一个超小型封装树脂密封 硅NPN外延晶体管， 它是专为高频电压的应用。 特点 ●高增益带宽乘积fT=4.5GHz的 ●高增益，低输 ●可在低电压下运行 ●超小型封装，便于安装 应用 对于电视调谐器，细胞电话系统，高频放大器 |