集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC
Collector Current(IC) | 80mA |
截止频率fT
Transtion Frequency(fT) | 11GHz |
直流电流增益hFE
DC Current Gain(hFE) | 80~160 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 800mW/0.8W |
| Description & Applications | Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz |
| 描述与应用 | NPN硅外延 UHF/ VHF宽频带放大器 特点 •高增益带宽积 FT =11 GHz的典型。 •高功率增益和低噪声系数; PG=10分贝典型。 NF=1.2 dB典型值。在f =900 MHz的 |