集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 3.3V |
集电极连续输出电流IC
Collector Current(IC) | 35mA |
截止频率fT
Transtion Frequency(fT) | 21GHz |
直流电流增益hFE
DC Current Gain(hFE) | 50~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 115mW/0.115W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅⋅⋅ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA • High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted • 3-pin ultra super minimold (t = 0.75 mm) |
| 描述与应用 | NPN硅RF晶体管 低噪声⋅⋅⋅高增益放大 3-PIN超超迷你 特点 •低噪音非常适于⋅高增益放大和振荡3 GHz或以上 NF=1.1 dB，GA= 11分贝@ F =2 GHz时，VCE= 2 V，IC=5毫安 •最大可用功率增益：MAG。 =12.5 dB典型值。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 •高FT：FT =21 GHz的TYP。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 •英尺= 25 GHz的的“UHS0”（超高速处理）技术通过 •3引脚超超级迷你（T =0.75毫米） |