集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 13V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 20GHz |
直流电流增益hFE
DC Current Gain(hFE) | 400~1000 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 735mW/0.735W |
| Description & Applications | NPN SILICON RF TRANSISTOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold (M04) package |
| 描述与应用 | NPN硅RF晶体管 中等输出功率放大（0.4 W） 扁平引线超薄型4引脚超级迷你（M04） 特点 •非常适合460 MHz到2.4 GHz的中等输出功率放大 PO（1分贝）=26.0 dBm。 @ VCE= 3.6 V，F =1.8 GHz时，引脚= 15 dBm的 集热效率高：ηC=60％ •UHS0-HV技术（FT =25千兆赫）通过 •高可靠性，通过使用金电极 •4-pin薄型扁平引线型超级迷你（M04）包 |